Nanocrystalline Alloys of Ii Vi Semiconductors from Molecular Multi Layer Templates

Nanocrystalline Alloys of Ii-vi Semiconductors

We present the synthesis and characterization of nanocrystalline II-VI semiconductors of mixed composition (CdSe/ZnSe, CdS) grown in fatty acid Langmuir-Schaefer multi-layer templates. The controlled production of i) homogeneous nanocrystalline Cd x Zn 1?x Se alloys and ii) heterogeneous mixtures of diierent pure composition II-VI semiconductors such as CdSe and ZnSe provides, in addition to th...

Chapter 3 . Gas Source Molecular Beam Epitaxy of Compound Semiconductors

This research program utilizes the chemical beam epitaxy laboratory and emphasizes the epitaxial growth of a wide variety of compound semiconductors (both Il-VI and Ill-V), as well as multilayered structures composed of II-VI/II-VI, II-VI/III-V and Ill-V/III-V heterostructures. The chemical beam epitaxy laboratory consists of two gaseous source epitaxy reactors (Il-VI dedicated and Ill-V dedica...

Dipole scattering in highly polar semiconductor alloys

The wide gap polar semiconductors III-V nitrides, II-VI oxides, and ferroelectrics exhibit large spontaneous and piezoelectric polarization due to their nonsymmetric crystal structures. Electrical conductivity in alloys of such crystals is degraded by scattering from the varying polarization coupled to alloy disorder. We have modeled this effect by dipole scattering. We have calculated dipole s...

Supporting Information Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals

Surface vacancies in II-VI and 111-V zinc blende semiconductors•>

We present calculations of the bound state energy levels of ideal vacancies near the ( 110) surface of some zinc blende II-VI and Ill-Y semiconductors: CdTe, ZnTe, GaAs, AlAs, InAs, and some alloys among them. Here we compare vacancies near the surface ofii-VI's with those ofiii-V's. In contrast to the III-V's, where a neutral vacancy has an odd number of electrons, a neutral vacancy in a II-VI...